FM24CL64B-GTR 64Kb I2C F-RAM with 100 Trillion Write Cycles 150ns Access Time 1MHz Speed 2.7-3.6V Operation Industrial Temp & 8-lead TSSOP
Features
■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8
❐ High-endurance 100 trillion (1014) read/writes
❐ 151-year data retention (See Data Retention and Endurance on page 10)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ Fast 2-wire Serial interface (I2C)
❐ Up to 1-MHz frequency
❐ Direct hardware replacement for serial (I2C) EEPROM
❐ Supports legacy timings for 100 kHz and 400 kHz
■ Low power consumption
❐ 100 A (typ) active current at 100 kHz
❐ 3 A (typ) standby current
■ Voltage operation: VDD = 2.7 V to 3.65 V
■ Industrial temperature: –40 C to +85 C
■ Packages
❐ 8-pin small outline integrated circuit (SOIC) package
❐ 8-pin thin dual flat no leads (DFN) package
■ Restriction of hazardous substances (RoHS) compliant
Applications
Industrial Automation
Real-time data logging (e.g., sensor logs, equipment status)
Production line parameter storage (supports high-frequency writes)
Fault protection (saving critical data during sudden power loss)
Smart Meters
Energy measurement data storage (supports thousands of daily writes)
Tariff change logs
Tamper-proof event recording
Automotive Electronics
Driving data recording (black box)
ECU parameter storage
Mileage and maintenance information
Medical Devices
Patient monitoring data logging
Equipment usage logs
Calibration parameter storage
IoT Devices
Edge computing data buffering
Firmware update backup
Configuration parameter storage
Consumer Electronics
Smart appliance state memory
Wearable device activity tracking
Real-time game progress saving
Description
The FM24CL64B is a 64-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories.
Unlike EEPROM, the FM24CL64B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24CL64B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM.
These capabilities make the FM24CL64B ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.
The FM24CL64B provides substantial benefits to users of serial (I2C) EEPROM as a hardware drop-in replacement. The device specifications are guaranteed over an industrial temperature range of –40 C to +85 C.
INFORMATION
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| Packaging | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® | |
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| DigiKey Programmable | | |
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FM24CL64B-GTR 64Kb I2C F-RAM with 100 Trillion Write Cycles 150ns Access Time 1MHz Speed 2.7-3.6V Operation Industrial Temp & 8-lead TSSOP Images
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